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rev 2 september 2005 1/16 16 STB20NM50 - STB20NM50-1 stp20nm50 - stp20nm50fp n-channel 550v@tj max - 0.20 ? - 20a - to220/fp-d2pak-i2pak zener-protected supermesh? mosfet general features high dv/dt and avalanche capabilities 100% avalanche tested low input capacitance and gate charge low gate input resistance description the mdmesh? is a new revolutionary mosfet technology that associates the multiple drain process with the company?s powermesh?horizontal layout. the resulting product has an outstanding low on-resistance, impressively high dv/dt and exellent avalanche characteristics and dynamic performances. applications the mdmesh? family is very suitable for increasing power density of high voltage converters allowing system miniaturization andhiher efficiencies order codes package internal schematic diagram type v dss(@tj max) r ds(on) i d STB20NM50 STB20NM50-1 stp20nm50 stp20nm50fp 550 v 550 v 550 v 550 v <0.25 ? <0.25 ? <0.25 ? <0.25 ? 20 a 20 a 20 a 20 a 1 2 3 1 2 3 1 3 to-220 to-220fp d2pak 1 2 3 i2pak sales type marking package packaging STB20NM50t4 b20nm50 d 2 pak tape & reel STB20NM50-1 b20nm50-1 i 2 pak tube stp20nm505 p20nm50 to-220 tube stp20nm50fp p20nm50fp to-220fp tube www.st.com
1 electrical ratings STB20NM50-1 - STB20NM50 - stp20nm50 - stp20nm50fp 2/16 1 electrical ratings table 1. absolute maximum ratings table 2. thermal data table 3. avalanche characteristics symbol parameter value unit to-220/d2pak/i2pak to-220fp v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 c 20 20 ( note 3) a i d drain current (continuous) at t c = 100 c 12.6 12.6 ( note 3) a i dm note 2 drain current (pulsed) 80 80 ( note 3) a p tot total dissipation at t c = 25 c 192 45 w derating factor 1.2 0.36 w/ c dv/dt note 1 peak diode recovery voltage slope 15 v/ns v iso insulation withstand volatge (dc) -- 2000 v t j t stg operating junction temperature storage temperature -65 to 150 c to-220/d2pak/i2pak to-220fp unit rthj-case thermal resistance junction-case max 0.65 2.8 c/w rthj-amb thermal resistance junction-amb max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 10 a e as single pulse avalanche energy (starting tj=25 c, i d =5a, v dd = 50v) 650 mj
STB20NM50-1 - STB20NM50 - stp20nm50 - stp20nm50fp 2 electrical characteristics 3/16 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states table 5. dynamic symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250a, v gs = 0 500 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating,tc = 125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 30v 100 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 345v r ds(on) static drain-source on resistance v gs = 10 v, i d = 10 a 0.20 0.25 ? symbol parameter test conditions min. typ. max. unit g fs note 4 forward transconductance v ds > i d(on) xr ds(on)max, i d = 10a 10 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v, f=1 mhz, v gs =0 1480 285 34 pf pf pf c oss eq. note 5 equivalent ouput capacitance v gs =0, v ds =0v to 400v 130 pf rg gate input resistance f=1mhz gate dc bias=0 test signal level=20mv open drain 1.6 ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =400v, i d = 20a v gs =10v (see figure 15) 40 13 19 56 nc nc nc
2 electrical characteristics STB20NM50-1 - STB20NM50 - stp20nm50 - stp20nm50fp 4/16 table 6. switching times table 7. source drain diode (1) i sd 20a, di/dt 400a/s, v dd v (br)dss , t j t jmax (2) pulse width limited by safe operating area (3) limited only by maximum temperature allowed (4) pulsed: pulse duration = 300s, duty cycle 1.5% (5) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =250 v, i d =10a, r g =4.7 ?, v gs =10v (see figure 16) 24 16 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =400 v, i d =20a, r g =4.7 ?, v gs =10v (see figure 16) 9 8.5 23 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm note 2 source-drain current source-drain current (pulsed) 20 80 a a v sd note 4 forward on voltage i sd =20a, v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =20a, di/dt = 100a/s, v dd =100 v, tj=25 c 350 4.6 26 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =20a, di/dt = 100a/s, v dd =100 v, tj=150 c 435 5.9 27 ns c a
STB20NM50-1 - STB20NM50 - stp20nm50 - stp20nm50fp 2 electrical characteristics 5/16 2.1 electrical characteristics (curves) figure 1. safe operating area for to-220/d2pak/i2pak figure 2. thermal impedance for to-220/d2pak/i2pak figure 3. safe operating area for to-220fp figure 4. thermal impedance for to-220fp figure 5. output characteristics figure 6. transfer characteristics
2 electrical characteristics STB20NM50-1 - STB20NM50 - stp20nm50 - stp20nm50fp 6/16 figure 7. transconductance figure 8. static drain-source on resistance figure 9. gate charge vs gate -source voltage figure 10. normalized gate threshold voltage vs temperatute figure 11. capacitance variations figure 12. normalized on resistance vs temperature
STB20NM50-1 - STB20NM50 - stp20nm50 - stp20nm50fp 2 electrical characteristics 7/16 figure 13. source-drain diode forward characteristics
3 test circuits STB20NM50-1 - STB20NM50 - stp20nm50 - stp20nm50fp 8/16 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for indictive load switching and diode recovery times figure 17. unclamped inductive waveform figure 18. unclamped inductive load test circuit
STB20NM50-1 - STB20NM50 - stp20nm50 - stp20nm50fp 4 package mechanical data 9/16 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack ? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
4 package mechanical data STB20NM50-1 - STB20NM50 - stp20nm50 - stp20nm50fp 10/16 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ? p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
STB20NM50-1 - STB20NM50 - stp20nm50 - stp20nm50fp 4 package mechanical data 11/16 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
4 package mechanical data STB20NM50-1 - STB20NM50 - stp20nm50 - stp20nm50fp 12/16 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 a1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 d 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 e 10 10.40 0.393 0.410 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l2 1.27 1.40 0.050 0.055 to-262 (i 2 pak) mechanical data
STB20NM50-1 - STB20NM50 - stp20nm50 - stp20nm50fp 4 package mechanical data 13/16 to-247 mechanical data 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r0.4 0.015 v2 0 o 4 o d 2 pak mechanical data 3
5 packing mechanical data STB20NM50-1 - STB20NM50 - stp20nm50 - stp20nm50fp 14/16 5 packing mechanical data tape and reel shipment d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
STB20NM50-1 - STB20NM50 - stp20nm50 - stp20nm50fp 6 revision history 15/16 6 revision history date revision changes 05-sep-2005 2 inserted ecopack indication
6 revision history STB20NM50-1 - STB20NM50 - stp20nm50 - stp20nm50fp 16/16 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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